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SUMMARY:Self-assembly of Si- and SiGe-based dielectric Mie resonators via 
 templated solid-state dewetting - Marco Abbarchi\, Aix-Marseille Universit
 é
DTSTART:20171013T130000Z
DTEND:20171013T140000Z
UID:TALK84031@talks.cam.ac.uk
CONTACT:Sharon Connor
DESCRIPTION:ielectric Mie resonators have attracted a great deal of attent
 ion over the past few years thanks to their remarkable capabilities in man
 ipulating light propagation at the nanoscale1\,2\,3. However\, the practic
 al implementation of technological products is still elusive. Important li
 mits are the absence of a high-performing material and a fabrication metho
 d that can be easily integrated into modern micro-electronic devices at af
 fordable costs. Here\, we provide theoretical and experimental evidence of
  solid state dewetting of ultra-thin silicon and silicon-germanium films o
 n insulators as an alternative fabrication method and semiconductor materi
 al for dielectric Mie resonator applications4-7. These dielectric resonant
  particles can be obtained over very large surfaces4 on arbitrary silica s
 ubstrates5. Remarkably\, this self-assembly process is independent on the 
 sample size. Furthermore\, the Si(Ge) islands can be precisely organised i
 n uniform arrays and complex oligomers arrangements6 featuring low size di
 spersion. Their composition profile can be controlled a posteriori via a G
 e condensation process to form core-shell Si/SiGe islands7\,8 and their di
 ffusion spectrum can be electrically tuned by changing the refractive inde
 x of the environment. As an example\, we demonstrate SiGe- based Mie reson
 ator arrays functioning as colour pass-band filters across the full visibl
 e spectral range9. The filters function both in transmission and diffusion
  and are fabricated using a methodology compatible with C- MOS technology.
  We note that the use of SiGe-based alloys in novel electronic devices\, s
 uch as FET and C- MOS transistors\, is nowadays extremely important. Becau
 se of this\, opening the field of dielectric MRs to SiGe-based semiconduct
 or alloys is an important step forward towards the integration of photonic
 s with\nelectronic devices.
LOCATION:Unilever Lecture Theatre\, Unilever Centre\, Department of Chemis
 try
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