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SUMMARY:Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions - 
 Laura Hanks\, University of Lancaster
DTSTART:20171025T131500Z
DTEND:20171025T140000Z
UID:TALK93436@talks.cam.ac.uk
CONTACT:Dr Joanna Waldie
DESCRIPTION:GaSb has a number of known applications\, primarily in optoele
 ctronics\, such as infrared detectors\, thermophotovoltaic converters and 
 LED’s. However\, the transport properties of this material (both the sta
 ndard p-type and more uncommon n-type) have generally been restricted to b
 ulk GaSb. GaSb also has a lower electron effective mass than it’s better
 -studied counterpart\, GaAs\, however it has a large number of defects reg
 ardless of growth method\, producing a high acceptor background.\n\nTheore
 tical transport results were produced using Nextnano software [1]\, with t
 he aim of measuring confined two-dimensional electron gas devices (a syste
 m not previously reported in GaSb). GaSb/Al0.2Ga0.8Sb heterostructures wer
 e grown at Lancaster University by molecular beam epitaxy\, with Hall bars
  of varying sizes subsequently fabricated. Measurements of these devices y
 ielded a higher accepting background than intended and ultimately resulted
  in p-type devices.\n\nI will discuss the theoretical and experimental res
 ults of these devices\, as well as subsequent growth trials of this materi
 al\, the problems we faced and how we are combating them.\n\n[1] S. Birner
  et al.\, Acta. Phys. Polonica. A 110\, 111\, (2006).
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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