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SUMMARY:Coherent spin manipulation in a CMOS transistor: an introduction t
 o fabrication and applications of hole spin quantum bits - Xavier Jehl\, C
 EA-INAC\, Institut Nanosciences et Cryogenie
DTSTART:20171204T141500Z
DTEND:20171204T151500Z
UID:TALK94717@talks.cam.ac.uk
CONTACT:Dr Joanna Waldie
DESCRIPTION:Microelectronics technology produces classical bits for logic 
 applications based on silicon transistors that can be as small as roughly 
 10nm either in gate length\, channel width or thickness [1]. At this scale
  and at low temperature such single-gate transistors behave as  quantum do
 ts in which a single spin can be isolated [2].\n\nWe will present the sili
 con-on-insulator CMOS nanowire technology we use to make multi-gate transi
 stors purposely for spin Qubits\, operated at low temperature\, as well as
  for conventional yet cryogenic electronics. \n\nWorking with P-type trans
 istors we demonstrated hole spin coherent manipulation with Rabi frequenci
 es as high as 80MHz and an inhomogeneous dephasing time T2* currently reac
 hing 300ns [3]. The underlying mechanism relying on g-tensor anisotropy ha
 s been studied by probing the angular dependence of the Rabi frequency [4]
 .\n\nAt first glance for N-type spin-orbit coupling seems too weak to allo
 w for electron spin resonance. While this is true in planar configuration\
 , we have managed to induce electron spin resonance thanks to the nanowire
  geometry of our devices which enhances the spin-orbit coupling [5].\n\n[1
 ] S. Barraud et al.\, IEEE Electron Device Lett. 33\, 1526 (2012)\n\n[2] B
 . Voisin et al.\, Nano Lett. 16\, 88 (2016)\n\n[3] R. Maurand et al.\, Nat
 . Commun. 7\, 13575 (2016)\n\n[4] A. Crippa et al.\, https://arxiv.org/abs
 /1710.08690\n\n[5] A. Corna et al.\, https://arxiv.org/abs/1708.02903
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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