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SUMMARY:Strain Tensor Mapping using Electron Backscatter Diffraction - Ang
 us Wilkinson\, University of Oxford
DTSTART:20080206T150000Z
DTEND:20080206T160000Z
UID:TALK9922@talks.cam.ac.uk
CONTACT:Dr Jonathan Barnard
DESCRIPTION:In this presentation we will briefly review earlier attempts t
 o study local elastic and plastic strains distributions using EBSD before 
 moving on to discuss recent cross-correlation based analysis of EBSD patte
 rns.\nCross-correlation methods can be used to determine small shifts in f
 eatures within an EBSD pattern compared to a reference pattern.  Pattern s
 hift measurements at many regions of the patterns can be used to establish
  a best fit strain and rotation tensor.  Shift measurements at ±0.05 pixe
 ls allow the elements of the strain tensor (and small misorientations) to 
 be measured to ±10-4 (and ±0.006° for rotations).  This is a significan
 t improvement in the angular resolution compared to the conventional linea
 r Hough (or Radon) transform based EBSD analysis.\nThe new cross-correlati
 on based analysis has been applied to several varied materials science pro
 blems.  Results from functional (SiGe/Si mesa and GaN layers) and structur
 al materials (crack tips\, and nanoindentations) will be used to illustrat
 e the use of the method in studying both elastic and plastic deformation.
LOCATION:T001 [Tower Seminar Room]\, Materials Science and Metallurgy\, De
 partment of
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