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Xingyou Chen, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Monday 21 May 2018, 14:15-15:15
Performance optimization of 2.0-2.6 mm metamorphic InGaAs photodetectors
- 👤 Speaker: Xingyou Chen, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- 📅 Date & Time: Monday 21 May 2018, 14:15 - 15:15
- 📍 Venue: Mott Seminar Room (Mott Building Room 531), Cavendish Laboratory
Abstract
The so-called wavelength-extended In(x)Ga(1-x)As photodetector and arrays with x>0.53 are attracting particular interests as they show important applications in spatial remote sensing, etc. The ln(0.53)Ga(0.47)As photodetectors grown lattice-matched to InP are commercially mature with cutoff wavelength at 1.7 μm. By now, large efforts have been devoted to improve the performance of wavelength-extended InGaAs photodetectors due to the lack of lattice-matched substrates. I will talk about the research background and the status in our laboratory. Also, our latest efforts in improving the device performance of the In(0.83)Ga(0.17)As photodetectors will be discussed. This includes the optimization of metamorphic buffers and electron barriers in the photodetector structures.
Series This talk is part of the Semiconductor Physics Group Seminars series.
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