Abstract

I discuss the metal-to-insulator transition in disordered InGaAs two-dimensional electron gas devices that are thermally isolated from a temperature reservoir. At high temperatures the devices are diffusion dominated, whilst at low temperatures they show insulating behaviour below conductance (s) ~ e2/h. The device characteristics for a localization behaviour cross-over from ‘Mott’-variable range hopping to interaction-dominated, ‘Efros-Shklovskii’ conditions where a Coulomb gap can be observed are studied. The suppression of phonon-assisted processes in this region of transport can lead to the condition s(T) = 0 at finite temperature T with a breakdown in thermalization. Progress towards this transport regime needed to study Many Body Localization effects are discussed with the importance of this for future technology.

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