Abstract

Abstract

Resistive switching (RS) materials, often called memristors, are promising candidates for next-generation non-volatile memory and neuromorphic computing applications. Positive attributes include simplicity, compatibility with conventional semiconductor processes, and the potential for 3D and scaling. Achieving all optimized properties together of very long retention, fast switching time, endurance, uniformity, multilevel switching and scaling is challenging. In this talk, I review the challenges of achieving simultaneous performance optimization and show how tuning the transport properties of ionic materials leads to superior performance. I demonstrate pronounced resistive switching at low voltages (SET voltage 1E6 cycles), uniformity, stable switching, multilevel resistance states, and fast switching speed

Judith Driscoll is Professor in the Materials Science Dept. at the University of Cambridge, and is Royal Academy of Engineering Chair in Emerging Technologies. She is also a visiting staff member at Los Alamos National Lab. She researches nanostructured oxide thin films for low energy electronics and energy materials applications.