Abstract

This talk will give an overview of the development of millimetre-wave/THz CMOS circuits at Hiroshima University which recently culminated in the demonstration of 28Gb/s wireless digital data transmission at 300GHz. Circuit design at above 100GHz is challenging for one thing because device models used for circuit simulation are not as predictive as at lower microwave frequencies, and for another because the MOS transistor is not the most high-performance device for high-frequency applications. The topics to be covered include millimetre-wave measurement, device modelling, and the design of a 300GHz CMOS transmitter that operates above the transistor fmax (unity-power-gain frequency).